High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.
(a) The schematic of the fabricated ZnO device. Two-dimensional electron gas is formed between (Mg, Zn)O and ZnO. Quantum dots are formed by applying gate voltage to this two-dimensional electron gas.
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