At the same time, the semiconductor industry has been moving toward 200 mm (8-inch) wafers to improve manufacturing ...

Imec showed this week’s IEDM meeting its co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power IC on 200 mm substrates.

What's needed to fill in the gaps in understanding GaN HEMTs and their catastrophic failures. Degradation mechanisms that plague GaN HEMTs. Why overvoltage ruggedness and surge-energy withstand go ...

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Teledyne has added three new devices to its lineup of off-the-shelf, space-screened GaN HEMTs for satellite and other high-reliability applications. The parts go through NASA Level 1 or ESA Class 1 ...

How GaN is used in DC-DC power converters. Challenges and advantages of using GaN semiconductors. When designers need high-voltage to low-voltage DC-DC converter designs, both the input and output ...

Infineon Technologies has announced a rad-hardened GaN transistor designed to operate in harsh space environments. It “is the first in-house manufactured GaN transistor to earn the highest quality ...

The Zeta-Series optical profilers provide accurate measurement and automated analysis of high aspect ratio structures such as HEMT vias using non-destructive and high throughput metrology techniques.

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...