Compound Semiconductor

Scaling N-polar GaN HEMT on Si to 8-inch

At the same time, the semiconductor industry has been moving toward 200 mm (8-inch) wafers to improve manufacturing ...
EurekAlert!

1200 V GaN HEMTs for the energy transition

Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...
Business Wire

Teledyne e2v HiRel and GaN Systems Unveil High Reliability 100V GaN Power HEMT

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is launching a new, ruggedized 100V/90A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems.
EDN

Drain-Current Characteristics of Enhancement-Mode GaN HEMTs

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
EDN

Integrated GaN HEMT ICs save board space

Innoscience has announced a family of four new integrated devices that combine a GaN HEMT, gate driver, current sense, protection and other functions in a single, industry-standard QFN 6 × 8-mm ...
Nasdaq

Fujitsu Successfully Grows Diamond Film to Boost Heat Dissipation Efficiency of GaN HEMT

TOKYO, Dec 5, 2019 - (JCN Newswire) - - Fujitsu Limited and Fujitsu Laboratories Ltd. have successfully developed the world's first technology for growing a diamond film with highly-efficient heat ...
Business Wire

Teledyne e2v HiRel Unveils Two High Power GaN HEMTs to its 650 V Family

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility Transistors) to its industry-leading, 650-volt, high-power family of ...
Electronic Design

Wolfspeed powers up 50-V GaN HEMT family with 3.0-GHz 250-W device

Wolfspeed, a global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has extended its family of 50-V unmatched GaN HEMT RF power ...
Electronics Weekly

650V E-mode GaN HEMT ICs

Innoscience has brought out a range of 650V E-mode GaN HEMT devices. New 190mΩ, 350mΩ and 600mΩ R DS(on) devices in industry-standard 8×8 and 5×6 DFN packages join previously-announced 140mΩ, 240mΩ ...
Semiconductor Engineering

Improving GaN Device Architectures

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
Semiconductor Engineering

Driving Cost Lower and Power Higher With GaN

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...
Electronic Design

The GaN Advantage in DC-DC Power Converters

How GaN is used in DC-DC power converters. Challenges and advantages of using GaN semiconductors. When designers need high-voltage to low-voltage DC-DC converter designs, both the input and output ...