Gallium nitride (GaN) is breaking out in the world of power electronics. GaN stands out for its superior physical properties, including high electron mobility, wide bandgap, and high thermal ...

Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a gallium nitride (GaN)-based ...

KnowMade concludes that these developments confirm that GaN is no longer viewed simply as an emerging semiconductor ...

This article is part of the TechXchange: Power Supp ly Design. Gallium nitride (GaN) continues to shake up the silicon-dominated world of power electronics. In the latest sign, Anker Innovations ...

As electric vehicle (EV) power electronics undergoes a paradigm shift towards wide bandgap (WBG) semiconductors, it is clear that silicon carbide (SiC) is becoming the material of choice, while ...

Gallium-nitride (GaN) technology has emerged as a strong contender in power electronics with its promise for higher energy efficiency and power density in smaller packages. While GaN has been around ...

Atomera has announced a new development designed to improve the performance of gallium nitride (GaN) on silicon.

New research points to safer devices with less loss at low voltages, but problems remain for high-voltage industrial ...

Gallium nitride field-effect transistors (GaN FETs) use electric fields to modulate the current flowing through semiconductor channels. Electronics engineers frequently integrate 650-V components into ...

Enphase Energy, Inc. (NASDAQ: ENPH), a global energy technology company, today published a technical white paper titled “Enphase Adoption of GaN Bi-Directional Switch Technology for Distributed Power ...

Aixtron has announced a production partnership with Rohm Semiconductor in which Rohm has chosen Aixtron's G10-GaN deposition ...

GaN-Based HWLLC Converter Topology Sets New Power Density and Peak Efficiency Benchmarks for Next-Generation Computing Devices, Power Tools and e-Bikes Renesas Electronics Corporation (TSE:6723), a ...