Abstract: In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three ...
Abstract: In this article, we investigate a new hardened GaN MISFET with an integrated Schottky contact (SC-MISFET). The new device architecture significantly improves the single-event burnout (SEB) ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results