Abstract: This study successfully demonstrates the fabrication and operation of the first fully integrated 14nm 2-stack SOM (Selector Only Memory) devices with a 1-Gb main cell array. A read window ...
Abstract: In this work, we present a comprehensive study on the gate stack TDDB challenges in Gate-all-around (GAA) nanosheet (NS) transistors (FETs), including volume-less Multiple Vt (Multi-Vt) ...
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