Ultra-Low VCE(sat) NPN and PNP Bipolar Transistors from Diodes Incorporated Maximize Power Density and Efficiency in Compact Automotive Designs Diodes Incorporated (Diodes) (Nasdaq: DIOD) today ...

Diodes has introduced a series of low saturation npn and pnp bipolar transistors optimised for automotive power switching and control. “With BVceo up to 100V, continuous current to 10A – and 20A peak ...

IGBTs combine the benefits of a voltage-driven insulated gate of MOSFETs with the improved bipolar conduction of BJTs. IGBTs combine the benefits of a voltage-driven insulated gate of MOSFETs with the ...

Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...

Abstract: A combined radiation effect is produced by 3-MeV protons, giving by both ionization and displacement damage, on semiconductor devices. In this paper, electrical characteristics and deep ...

Relays come in a variety of forms, including solid state and electromechanical, which are the more common types. Though there are many different kinds of relays, all of them have the same mechanism. A ...

Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction transistor (BJT).

MOSFETs are a type of field-effect transistor (FET) widely used in modern electronic circuits. It consists of a channel (usually made of silicon) between a source and a drain terminal. A gate ...

Abstract: In this paper, the effect of nitride passivation layer on the irradiation response of PNP bipolar junction transistors (BJTs) by Co-60 gamma ray under high and low dose rates is investigated ...